RF & High Performance
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RF CMOS SOI Switch Technology
TowerJazz announces availability of wireless antenna switch SOI process technology applicable to multiple wireless standards. SOI based solutions cost substantially less than legacy solutions based on GaAs pHEMPT or silicon-on-sapphire (SOS) technologies. Our SOI technology is unique relative to other SOI processes in that it maintains full compatibility with its bulk CMOS process enabling integration of control functions, low-noise amplifiers and power amplifiers on a single chip. High-end smart-phones can benefit most from integration while lower-end phones can benefit simply from the lower cost of SOI.
The TowerJazz SOI process combines a 6 or 4 metal layer CMOS process with high resistivity SOI substrates. It is a 0.18µm technology with dual gate 1.8V and 3.3V or 5V MOSFETs and a 5V RFLDMOS with Ft of 19 GHz and breakdown of 20V. The 3.3V and 5V FETs facilitate the integration of HVCMOS blocks while the 1.8V FETs are the integration of logic functions. The LDMOS device provides for reliable, high performance RF power.